APPLICATION
NOTES

 App Note 011   Impact of Drain Voltage on GaN RF Transistors and Safe Operating Area (SOA) Analysis

While increasing the drain voltage in GaN RF transistors can boost output power, it introduces significant challenges related to thermal management, efficiency, and reliability. Understanding the SOA and adhering to its constraints is crucial for optimizing performance and 

ensuring long-term stability. 

Proper design considerations, including thermal management and optimized biasing, can help mitigate these issues and extend the 

operational lifespan of GaN devices.